Memory devices including floating body transistor...

Details Memory devices including floating body transistor... Memory devices including floating body transistor...

2006-10-12

2008-10-07

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S190000

Reexamination Certificate

active

07433223

ABSTRACT:
In one aspect, a semiconductor memory device is provided which includes complementary first and second bit lines, a unit memory cell including complementary first and second floating body transistor capacitorless memory cells respectively coupled to the complementary first and second bit lines, and a voltage sense amplifier coupled between the complementary first and second bit lines which amplifies a voltage differential between the complementary first and second bit lines.

REFERENCES:
patent: 6567330 (2003-05-01), Fujita et al.
patent: 7177175 (2007-02-01), Fazan et al.
patent: 7257015 (2007-08-01), Ohsawa
patent: 2005/0041457 (2005-02-01), Forbes
patent: 2006/0126374 (2006-06-01), Waller et al.

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