Memory devices having a carbon nanotube

Details Memory devices having a carbon nanotube Memory devices having a carbon nanotube

2009-05-20

2011-10-18

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

C257S002000, C257S003000, C257S295000, C257S296000, C257S415000, C257S476000

Reexamination Certificate

active

08039919

ABSTRACT:
In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.

REFERENCES:
patent: 2007/0025138 (2007-02-01), Furukawa et al.
patent: 10-0376199 (2003-03-01), None
patent: 10-0652410 (2006-11-01), None

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