Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-21
2011-06-21
Fulk, Steven J (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309, C438S261000
Reexamination Certificate
active
07964908
ABSTRACT:
In one aspect, a memory cell includes a plurality of dielectric layers located within a charge storage gate structure. At least one of the dielectric layers includes an dielectric material including oxygen, and nano regions including oxygen embedded in the dielectric material, where an oxygen concentration of the dielectric material is the greater than an oxygen concentration of the nano regions. In another aspect, at least one of the dielectric layers includes a dielectric material and nano regions embedded in the dielectric material, where an atomic composition of the dielectric material is the same as the atomic composition of the nano regions, and a density of the dielectric material is the greater than a density of the nano regions.
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Chung Young-su
Kim Sun-Jung
Kim Young-sun
Lee Eun-ha
Oh Se-hoon
Fulk Steven J
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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