Memory devices and methods of operation thereof using...

Static information storage and retrieval – Read/write circuit – Signals

Reexamination Certificate

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C365S207000, C365S233100, C365S189020, C365S185210

Reexamination Certificate

active

11327877

ABSTRACT:
A memory device includes a control circuit configured to disable a local input/output line sense amplifier responsive to a global input/output line sense amplifier enable signal. The device may further include a column select gate configured to control transfer of data from a memory cell to the local input/output line and the control circuit may be configured to disable transfer of data via the column select gate responsive to the global input/output line sense amplifier enable signal.

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patent: 5982674 (1999-11-01), Lines et al.
patent: 6414898 (2002-07-01), Chien
patent: 6442089 (2002-08-01), Fletcher et al.
patent: 6504766 (2003-01-01), Pilo et al.
patent: 6876595 (2005-04-01), Bhavnagarwala et al.
patent: 6930941 (2005-08-01), Nakase
patent: 6937535 (2005-08-01), Ahn et al.
patent: 2006/0028888 (2006-02-01), Shin et al.

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