Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-10-30
2007-10-30
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S207000, C365S233100, C365S189020, C365S185210
Reexamination Certificate
active
11327877
ABSTRACT:
A memory device includes a control circuit configured to disable a local input/output line sense amplifier responsive to a global input/output line sense amplifier enable signal. The device may further include a column select gate configured to control transfer of data from a memory cell to the local input/output line and the control circuit may be configured to disable transfer of data via the column select gate responsive to the global input/output line sense amplifier enable signal.
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Chol Hye-In
Kyung Kye-Hyun
Hur J. H.
Myers Bigel Sibley & Sajovec, PA.
Samsung Electronics Co,. Ltd.
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