Memory device with self refresh cycle control function

Details Memory device with self refresh cycle control function Memory device with self refresh cycle control function

2006-09-27

2008-12-30

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S222000, C365S210110, C365S189070

Reexamination Certificate

active

07471583

ABSTRACT:
Provided is a memory device capable of automatically controlling a self refresh cycle by sensing an ambient temperature, rather than setting Extended Mode Register Set (EMRS) code. The memory device includes a temperature sensing unit for generating a first voltage independent of a temperature variation and a second voltage dependent upon a temperature variation, a comparing unit for comparing the first voltage with the second voltage to provide a comparison result signal, and a self refresh signal generating unit for receiving a self refresh entry signal and generating a self refresh signal of temperature compensated cycle under the control of the comparison result signal.

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Korean Office Action, with English translation, issued in Korean Patent Application No. KR 10-2006-0049122, mailed Jul. 24, 2007.
Korean Office Action issued in corresponding Korean Patent Application No. KR 10-2006-0049122, issued on Jan. 9, 2008.

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