Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06949793
ABSTRACT:
Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device comprises a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval; a memory cell which is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons; and a control gate which is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.
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Chae Soo-doo
Choi Won-bong
Booth Richard A.
Burns Doane Swecker & Mathis L.L.P.
Samsung Electronics Co,. Ltd.
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