Memory device with pre-fetch circuit and pre-fetch method

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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Details

C365S185250, C365S220000, C365S222000

Reexamination Certificate

active

07342835

ABSTRACT:
A memory device includes plural memory blocks, each memory block having memory cells arranged in wordlines and bitlines and a selector to select a wordline of memory cells. A group of first sense amplifiers are coupled to each memory block to at least one of read data from and write data to the selected wordline. A buffer of latches are coupled to the group of first sense amplifiers and have sufficient capacity to hold data corresponding to the selected wordline of memory cells.

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