Memory device with hydrogen-blocked ferroelectric capacitor

Details Memory device with hydrogen-blocked ferroelectric capacitor Memory device with hydrogen-blocked ferroelectric capacitor

2006-06-13

2006-06-13

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S399000, C438S238000, C257S296000

Reexamination Certificate

active

07060552

ABSTRACT:
A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor substrate, a capacitance insulating film formed on the first electrode, and a second electrode provided on the capacitance insulating film; a step reducing film covering an upper surface and a side surface of the memory cell capacitor; and an overlying hydrogen barrier film covering the step reducing film.

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