Memory device with high charging voltage bit line

Details Memory device with high charging voltage bit line Memory device with high charging voltage bit line

2005-01-04

2005-01-04

Lam, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Precharge

C365S207000, C365S189090

Reexamination Certificate

active

06839294

ABSTRACT:
A memory device with high charging voltage bit lines, comprising: memory cells, sense amplifiers, and high charging voltage bit line circuits. Herein, the memory cell is used to store data and electrically couples with a pair of bit lines. The sense amplifier with a pair of sense nods, which electrically couples with the pair of bit lines, is used to sense the differential voltage levels of the pair of sense nodes while the memory cell is active. The high charging voltage bit line circuit is used to provide a charging voltage, which is higher than the logical high voltage of the memory cell, for charging the memory cell.

REFERENCES:
patent: 5737276 (1998-04-01), Shin et al.
patent: 6351422 (2002-02-01), Rohr et al.

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