Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-08-07
2007-08-07
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S191000, C326S028000, C326S030000
Reexamination Certificate
active
10975808
ABSTRACT:
A memory device includes a first termination unit coupled to a first pin for receiving a first signal having a first frequency component. The memory device also includes a second termination unit coupled to a second pin for receiving a second signal having a second frequency component higher than the first frequency component. The first termination unit is a different type from the second termination unit that provides less signal distortion than the first termination unit. For example, the first termination unit is of an open-drain type that has less power consumption, and the second termination unit is of a push-pull type that has less signal distortion.
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Choi Monica H.
Samsung Electronics Co,. Ltd.
Tran Anthan
Zarabian Amir
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