Memory device with adjustable read reference based on ECC...

Details Memory device with adjustable read reference based on ECC... Memory device with adjustable read reference based on ECC...

2011-01-04

2011-01-04

Baderman, Scott T (Department: 2112)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Digital data error correction

C714S763000

Reexamination Certificate

active

07865797

ABSTRACT:
A first value from a set of bit cells of a sector of a non-volatile memory device is sensed based on a first read reference. A second value from the set of bit cells is sensed based on a second read reference different than the first read reference. A third read reference for a first subsequent access to the sector of the non-volatile memory device is determined based on at least one of the first read reference and the second read reference in response to determining a first error code condition associated with the first value and a second error code condition associated with the second value represent different error code conditions.

REFERENCES:
patent: 5386388 (1995-01-01), Atwood et al.
patent: 6163481 (2000-12-01), Yamada et al.
patent: 6678192 (2004-01-01), Gongwer et al.
patent: 6735114 (2004-05-01), Hamilton et al.
patent: 6906951 (2005-06-01), Wong
patent: 2004/0205440 (2004-10-01), Kojima
patent: 2005/0007834 (2005-01-01), Hidaka
patent: 2007/0030729 (2007-02-01), Chan et al.
Polansky et al., “A 4b/cell NROM 1Gb Data-Storage Memory,” Saifun Semiconductors, Netanya, Isreal, Macroniz, Hsinchu, Taiwan, ISSCC 2006, 4 pages.
Actions on the Merits by the U.S.P.T.O. as of Apr. 21, 2008, 1 page.
Sit, et al., “A Four-Phase Handshaking Asynchronous Static RAM Design for Self-Timed Systems,” IEEE Journal of Solid-State Circuits, vol. 34, No. 1, Jan. 1999, pp. 90-96.

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