Memory device with a length-controllable channel

Details Memory device with a length-controllable channel Memory device with a length-controllable channel

2008-07-30

2011-10-25

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000

Reexamination Certificate

active

08044449

ABSTRACT:
A memory device is provided. The memory device includes a substrate, a trench having an upper portion and a lower portion formed in the substrate, a trench capacitor formed in the lower portion of the trench, a collar dielectric layer formed on a sidewall of the trench capacitor and extending away from a top surface of the substrate, a first doping region formed on a side of the upper portion of the trench in the substrate for serving as source/drain, a conductive layer formed in the trench and electrically connected to the first doping region, a top dielectric layer formed on conductive layer, a gate formed on the top dielectric layer, an epitaxy layer formed on both sides of the gate and on the substrate and a second doping area formed on a top of the epitaxy layer for serving as source/drain.

REFERENCES:
patent: 5879998 (1999-03-01), Krivokapic
patent: 6838866 (2005-01-01), Tsai et al.
patent: 2004/0256665 (2004-12-01), Birner et al.

Affiliated with

Also associated with

Rating

Memory device with a length-controllable channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device with a length-controllable channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device with a length-controllable channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4262375