Memory device, memory system having the same, and...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S185240

Reexamination Certificate

active

08031517

ABSTRACT:
A method of writing multi-bit data to a semiconductor memory device with memory cells storing data defined by a threshold value, the method comprising, for each memory cell, writing a least significant bit, verifying completion of writing the least significant bit, verifying including comparing a written value to one of a low least significant bit verification value and a high least significant bit verification value, and writing a next significant bit upon completion of writing the least significant bit.

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