Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-17
2006-01-17
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S954000
Reexamination Certificate
active
06987048
ABSTRACT:
A memory device and a method of fabrication are provided. The memory device includes a semiconductor substrate, a bottom dielectric, a charge storing layer, and a top dielectric in a stacked gate configuration. Silicided buried bitlines, which function as a source and a drain, are formed within the substrate. The silicided bitlines have a reduced resistance, which greatly reduces the number of bitline contacts necessary in an array of memory devices.
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Cheng Ning
Erhardt Jeff P.
Kinoshita Hiroyuki
Ramsbey Mark T.
Tabery Cyrus
Advanced Micro Devices , Inc.
Booth Richard A.
Renner , Otto, Boisselle & Sklar, LLP
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