Memory device having implanted oxide to block electron...

Details Memory device having implanted oxide to block electron... Memory device having implanted oxide to block electron...

2006-12-22

2009-11-24

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S257000, C438S279000

Reexamination Certificate

active

07622373

ABSTRACT:
A memory device includes a substrate, a first gate stack overlying the substrate, a second gate stack overlying the substrate and spaced apart from the first gate stack, an oxide region formed at a first depth within the substrate and between the first and second gate stacks, and an impurity doped region formed at a second depth within the substrate and between the first and second gate stacks, the first depth being lower than the second depth.

REFERENCES:
patent: 6596593 (2003-07-01), Ishii
patent: 6987048 (2006-01-01), Cheng et al.
patent: 2003/0111699 (2003-06-01), Wasshuber et al.

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