Memory device having cross-shaped semiconductor fin structure

Details Memory device having cross-shaped semiconductor fin structure Memory device having cross-shaped semiconductor fin structure

2008-01-14

2010-12-14

Mai, Anh D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE29300, C257SE29309

Reexamination Certificate

active

07851844

ABSTRACT:
In an embodiment, a memory device, including: a semiconductor fin structure, each end portion of the fin structure including a source/drain region; a charge storage layer covering at least a portion of the fin structure; and a gate layer covering at least a portion of the charge storage layer.

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Eitan, B., et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.

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