Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-15
1992-12-08
Dixon, Joseph L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257305, 365149, G11C 1140
Patent
active
051703726
ABSTRACT:
A memory device having an array of memory cells each including a trench capacitor and a pass transistor. The transistor has its source connected to the storage capacitor, its drain connected to a bit line, and its gate connected to a word line. The bit line is formed over a field oxide layer formed on the semiconductor substrate so there is minimal contact between the bit line and the semiconductor substrate. The storage dielectric in the trench is recessed from the surface of the semiconductor substrate.
REFERENCES:
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 4752819 (1988-06-01), Koyama
patent: 4792834 (1988-12-01), Uchida
patent: 4794563 (1988-12-01), Maeda
patent: 4914628 (1990-04-01), Nishimura
Braden Stanton C.
Dixon Joseph L.
Donaldson Richard L.
Hiller William E.
Lane Jack A.
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