Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-08
2005-11-08
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S295000, C257S529000, C257S776000, C257S777000, C438S099000, C438S710000
Reexamination Certificate
active
06962844
ABSTRACT:
A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.
REFERENCES:
patent: 4803402 (1989-02-01), Raber
patent: 5060191 (1991-10-01), Nagasaki
patent: 6212093 (2001-04-01), Lindsey
patent: 6272038 (2001-08-01), Clausen
patent: 6344662 (2002-02-01), Dimitrakopoulos et al.
patent: 6352854 (2002-03-01), Nova
patent: 6498744 (2002-12-01), Gudesen et al.
patent: 6541869 (2003-04-01), Gudesen et al.
patent: 6552409 (2003-04-01), Taussig et al.
patent: 6670659 (2003-12-01), Gudesen et al.
patent: 2001/0054709 (2001-12-01), Heath
patent: 1179863 (2002-02-01), None
patent: 1265287 (2002-12-01), None
patent: WO9730445 (1997-08-01), None
patent: WO0127972 (2001-04-01), None
“Transient space charge limited current pulse shapes in molecularly doped polymers” by DM Goldie in “J. Phys.D.: Appl. Phys.32 (1999) 3058-3067” Printed in the UK PH:S0022-3727 (99)03831-0 pp. 3058-3067.
“The estimation of trap-free space charge limited current magnitudes in molecularly doped polymers” by D.M. Goldie, A.A.W. Macartney, R.A.G. Gibson & R.S. Gairns from “Philosophical Magazine B”, 1997, vol. 75.No. 4. pp. 553-565.
“Inter-layer mixing effect on the transport properties of a dual layer organic photoreceptor interface” by A.A.W.Macartney,D.M. Goldie, R.A.G. Gibson & R.S. Gairns from “Synthetic Metals” 67 (1994) pp. 201-205.
“Nanoimprint lithography:challenges and prospects” by S. Zankovych, T Hoffman, J Seekamp, J-U Bruch and CM Sotomayor Torres from Institute of Physics Publishing Nanotechnology 12 (2001) pp. 91-95.
“Multilevel nanoimprint lithography with submicron alignment over 4 in. Si Wafers” by Wei Zhang and Stephen Y. Chou from “Applied Physics Letters” vol. 79, No. 6, Aug. 6, 2001; pp. 845-847.
“Direct three-dimensional patterning using nanoimprint lithography” by Mingtao Li, Lei Chen and Stephen Y. Chou from “2001 American Institute of Physics” downloaded Apr. 29, 2002; pp. 3322-3324.
“Product information Resist mr-I 9000 series” from “Nanoimprint lithography” printed from the web url http://www.microresist.de/prod_info_mri9000.htm on Apr. 29, 2002; 5 pages.
“Directed Assembly of One Dimensional Nanostructures into Functional Networds” by Yu Huang, Xiangfeng Duan, Qingqiao Wei and Charles M. Lieber from “Science” vol. 291, Jan. 26, 2001 pp. 630-533.
Coulman Donald J.
Hewlett--Packard Development Company, L.P.
Nelms David
Nguyen Dao H.
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