Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-18
2007-12-18
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21171, C438S783000
Reexamination Certificate
active
11065388
ABSTRACT:
A memory device having a metal nanocrystal charge storage structure and a method for its manufacture. The memory device may be manufactured by forming a first oxide layer on the semiconductor substrate, then disposing a porous dielectric layer on the oxide layer and disposing a second oxide layer on the porous dielectric layer. A layer of electrically conductive material is formed on the second layer of dielectric material. An etch mask is formed on the electrically conductive material. The electrically conductive material and the underlying dielectric layers are anisotropically etched to form a dielectric structure on which a gate electrode is disposed. A metal layer is formed on the dielectric structure and the gate electrode and treated so that portions of the metal layer diffuse into the porous dielectric layer. Then the metal layer is removed.
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Besser Paul Raymond
Krivokapic Zoran
Pangrle Suzette Keefe
Wang Connie Pin-Chin
You Lu
Advanced Micro Devices , Inc.
Everhart Caridad
Farjami & Farjami LLP
Spansion LLC
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