Memory device forming methods

Details Memory device forming methods Memory device forming methods

2004-07-28

2009-10-06

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S589000, C438S931000, C257SE21066, C257SE21646, C257SE21661, C257SE21680

Reexamination Certificate

active

07598134

ABSTRACT:
A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.

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