Memory device evaluation methods using test capacitor patterns

Details Memory device evaluation methods using test capacitor patterns Memory device evaluation methods using test capacitor patterns

1998-11-30

2000-05-30

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365201, G11C 1122

Patent

active

060698179

ABSTRACT:
A ferroelectric memory device formed on a microelectronic substrate is evaluated. The memory device includes a sense amplifier and a plurality of ferroelectric capacitors that are operatively connected to the sense amplifier to read information stored in the ferroelectric capacitors. A plurality of test ferroelectric capacitors is formed on the microelectronic substrate. Polarization characteristics are determined for the plurality of test ferroelectric capacitors. An input to the sense amplifier is estimated from the determined polarization characteristics, and the ferroelectric memory device is evaluated based on the estimated input. The estimated input may be compared to an input criterion, e.g., a minimum sensing charge or voltage for the sense amplifier, and the ferroelectric memory device may be either rejected or subjected to further testing depending on whether the estimated input fails to meet or meets the input criterion.

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Materials Research Society, Symposium Proceeding vol. 493, "Ferroelectric Thin Films VI," Nov. 30-Dec. 4, 1997, Boston, Massachusetts.
Materials Research Society, Abstract, Session U9: Pb-Based Ferroelectrics; 1997 Fall Meeting, Dec. 1, 1997, Boston, Massachusetts.

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