Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-08-28
2007-08-28
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189050, C365S195000
Reexamination Certificate
active
11256879
ABSTRACT:
An integrated circuit memory device includes a plurality of memories and a refresh controller within a memory system. The refresh controller is configured to generate a refresh request signal. The plurality of memories includes a plurality of banks of memory responsive to the refresh request signal. An additional memory includes a buffer unit configured to generate a refresh indication signal to a first one of the plurality of banks of memory and to receive buffer write data addressed to the first one of the plurality of banks of memory in response to receiving a refresh-access interrupt signal from the one of the plurality of banks of memory. The plurality of banks of memory and the buffer unit may be separate DRAM chips.
REFERENCES:
patent: 6449685 (2002-09-01), Leung
patent: 6584033 (2003-06-01), Ayukawa et al.
patent: 6707743 (2004-03-01), Leung et al.
patent: 6757784 (2004-06-01), Lu et al.
patent: 1020020057307 (2002-07-01), None
Ha Min-yeol
Jung Hyun-taek
Pyo Suk-soo
Dinh Son
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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