Memory device and method of operating the same

Details Memory device and method of operating the same Memory device and method of operating the same

2006-11-16

2008-11-25

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S185250, C365S203000, C365S230060

Reexamination Certificate

active

07457181

ABSTRACT:
A memory device has a global input/output line pair configured for data transfer. The memory device includes a sense amplifier, a detecting unit and a detect control signal generating unit. The sense amplifier is coupled to the global input/output line pair. The detecting unit detects a potential difference between the global input/output line pair. The detect control signal generating unit disables an operation of the sense amplifier and precharges the global input/output line pair to a predetermined voltage. A precharge operation of a memory device may be performed at a higher speed so that a high speed operation of the memory device may be achieved. In addition, the operating time of the sense amplifier may be decreased so that the power consumption of the memory device may be reduced.

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