Memory device and method of manufacturing the same

Details Memory device and method of manufacturing the same Memory device and method of manufacturing the same

2004-12-03

2009-02-17

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000

Reexamination Certificate

active

07491997

ABSTRACT:
A memory device and a method of fabricating the same are provided. The method includes forming a gate stack on a semiconductor substrate and partially exposing upper end portions of the semiconductor substrate by etching the gate stack to form a gate stack structure, and implanting a dopant into the exposed portions of the semiconductor substrate to form source and drain regions, wherein the gate stack structure is etched such that its width increases from top to bottom. Accordingly, it is possible to manufacture a memory device with high integration, using a simplified manufacture process.

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Second Office Action issued in Chinese Patent Application No. 2004100983589 on Jul. 27, 2007, with English Translation.

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