Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2008-01-08
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S393000, C257SE27013, C257SE27066
Reexamination Certificate
active
11140298
ABSTRACT:
In one embodiment, a memory device includes a semiconductor substrate, a first region formed in a predetermined region of the semiconductor substrate, and in which a plurality of memory transistors are disposed, and a second region adjacent to the first region, and in which a selection transistor is formed to supply a predetermined voltage to the memory transistor. The second region of the substrate may have a higher impurity concentration than an entire region of the substrate other than the second region. Reduced area of the selection transistor can be realized with a shortened channel length, without a decreased threshold voltage.
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Ho Tu-Tu
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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