Memory device and method of amplifying voltage levels of bit...

Details Memory device and method of amplifying voltage levels of bit... Memory device and method of amplifying voltage levels of bit...

2006-08-08

2006-08-08

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S203000, C365S207000

Reexamination Certificate

active

07088628

ABSTRACT:
When first memory cells connected to a bit line are selected, the bit-line sense amplifier amplifies the voltage levels of the bit line and the complementary bit line using the first current path and the second current path, wherein the first current path is formed between the output node of the sensing enable unit and the bit line in response to the voltage level of the complementary bit line and the first addressing signal, and the second current path is formed between the output node of the sensing enable unit and the complementary bit line in response to the voltage level of the bit line and the second addressing signal.

REFERENCES:
patent: 6590819 (2003-07-01), Baum et al.

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