Memory device and method for forming a passivation layer...

Details Memory device and method for forming a passivation layer... Memory device and method for forming a passivation layer...

2007-01-02

2007-01-02

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S261000, C438S287000, C438S769000, C257SE21680, C257SE27103

Reexamination Certificate

active

10671773

ABSTRACT:
A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.

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Wolf and Tauber; “Silicon Processing for the VLSI Era vol. 1: Process Technology”; pp. 161 and 168; 1986, Lattice Press; Sunset Beach, CA.

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