Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-09-11
2010-11-30
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185090, C365S185110, C365S185200
Reexamination Certificate
active
07843727
ABSTRACT:
A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.
REFERENCES:
patent: 2003/0041299 (2003-02-01), Kanazawa et al.
patent: 2006/0026489 (2006-02-01), Noda et al.
patent: 2007/0226592 (2007-09-01), Radke
patent: 2007/0242522 (2007-10-01), Hemink
patent: 2008/0137416 (2008-06-01), Lee
patent: 1 416 380 (2004-05-01), None
Cho Kyoung Lae
Eun Heeseok
Kim Jae Hong
Kong Jun Jin
Park Yoon Dong
Harness & Dickey & Pierce P.L.C.
Ho Hoai V
Samsung Electronics Co,. Ltd.
LandOfFree
Memory device and data reading method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device and data reading method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and data reading method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4221434