Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2011-01-25
2011-01-25
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S686000, C257SE23024
Reexamination Certificate
active
07875985
ABSTRACT:
A memory device comprising at least one memory stack of stacked memory dies which are staggered with respect to each other,each stacked memory die of said memory stack comprising along its edge die pads for bonding said stacked memory die to substrate pads of said memory device connectable to a control circuit,wherein each die pad of a stacked memory die which connects said memory die individually to said control circuit comprises an increased distance (di) in comparison to die pads of said stacked memory die which connect said stacked memory die in parallel with corresponding die pads of other stacked memory dies of said memory stack to said control circuit.
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German Office Action dated Aug. 24, 2007.
Dossi Roberto
Hiller Dietmar
Knoblauch Andreas
Patterson & Sheridan LLP
Qimonda AG
Wagner Jenny L
Zarneke David A
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