Memory device

Details Memory device Memory device

1999-07-22

2000-09-12

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

365151, G11C 1100

Patent

active

061186864

ABSTRACT:
A memory device for storing information includes a conductive layer functioning as a current passage, an information storing section, the information storing section comprising at least two quantum dot groups, including a plurality of quantum dots, and a plurality of barrier layers, the barrier layers confining charges in the quantum dots, the energy level localized in a quantum dot group nearer the conductive layer being higher than the energy level localized in another quantum dot group distant from the conductive layer, and a control electrode provided on the information storing section, on the opposite side from the conductive layer. Pulse voltages having different widths and different heights are applied between the conductive layer and the information storing section thereby transferring charge from the conductive layer and accumulating charge in different quantum dot groups in response to the widths and heights to store the information. The memory device can operate at a low voltage and can store multivalued information.

REFERENCES:
patent: 5991190 (1999-11-01), Peterson
patent: 6016269 (2000-01-01), Peterson et al.
patent: 6026013 (2000-02-01), Peterson

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