Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-08-14
2007-08-14
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S230020
Reexamination Certificate
active
11277044
ABSTRACT:
In a memory circuit, memory cells are arranged in a matrix by “row line-and column line” (may also denoted as “word line and bit line”). The invention provides a memory circuit and related method capable for independently pre-charging the column lines or bit lines selectively during data accessing according to results of column pre-decoding to decrease the pre-charging power consumption. After pre-charging, the objective memory cell is enabled to change or not to change the corresponding electric level of the connected column line according to the stored data, and a sense amplifier detects the stored data by measuring the electric level of the column line.
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Cheng Chi-Ting
Tseng Po-Yo
Hsu Winston
Tran Michael T
VIA Technologies Inc.
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