Memory cells with nonuniform floating gate structures

Details Memory cells with nonuniform floating gate structures Memory cells with nonuniform floating gate structures

2006-02-14

2006-02-14

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C438S257000

Reexamination Certificate

active

06998669

ABSTRACT:
In a floating gate memory cell including a floating gate separated from an active region by a tunnel isolation region, a first one of the active region and the floating gate comprises a portion that protrudes towards a second one of the active region and the floating gate. In some embodiments, the protruding portion tapers toward the second one of the active region and the floating gate. The tunnel insulation layer may be narrowed at the protruding portion. Protruding portions may be formed on both the floating gate and the active region.

REFERENCES:
patent: 6706592 (2004-03-01), Chern et al.
patent: 2004/0084713 (2004-05-01), Hsieh

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