Memory cell with transfer device node in selective polysilicon

Details Memory cell with transfer device node in selective polysilicon Memory cell with transfer device node in selective polysilicon

1998-03-30

2000-03-14

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438246, 438247, 438248, 438249, 257301, 257305, H01L 218242

Patent

active

060372109

ABSTRACT:
A memory cell is constructed with one electrode of the transfer device extending over a trench capacitor, saving about 6.5% of cell area. Selective polysilicon for a strap seeded from the trench is grown in the same step in which selective single crystal silicon seeded from the substrate is grown for the transfer device. At least a portion of the node diffusion is located in single crystal epitaxial silicon extending over the trench. The process eliminates the need for a separate strap masking step.

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