Memory cell with stability switch for stable read operation...

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S189110

Reexamination Certificate

active

10906032

ABSTRACT:
A memory cell and method of destabilizing a memory cell for facilitating a write operation are provided. A stability switch is coupled between one of a voltage supply or a ground terminal and the memory cell, and is turned off during the write operation to reduce the drive voltage required to drive a bit value into the memory cell.

REFERENCES:
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patent: 6529400 (2003-03-01), Bhavnagarwala et al.
patent: 6649456 (2003-11-01), Liaw
patent: 2003/0002329 (2003-01-01), Wong
patent: 2005/0213370 (2005-09-01), Khellah et al.
Bernstein, K. et al., SOI Circuit Design Concepts, ISBN 0-7923-7762-1, Chapter 6.3.2, pp. 124-128.
Marshall, A. et al., SOI Design: Analog, Memory and Digital Techniques, ISBN 0-7923-7640-4, Chapter 8.6, pp. 197-200.
Bernstein, K. et al., SOI Circuit Design Concepts, ISBN 0-7923-7762-1, Chapter 6.4, pp. 131-137.

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