Compound semiconductor device and method of fabricating the...

Details Compound semiconductor device and method of fabricating the... Compound semiconductor device and method of fabricating the...

2007-05-29

2007-05-29

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S020000, C257S024000

Reexamination Certificate

active

10813085

ABSTRACT:
In formation-by-growth of an AlGaN layer3as having a double-layered structure, a non-doped AlGaN layer (i-AlGaN layer) having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 3 nm on an i-GaN layer, and further thereon, an AlGaN layer (n-AlGaN layer) doped with Si in a concentration of approximately 2×1018/cm3and having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 17 nm.

REFERENCES:
patent: 6897495 (2005-05-01), Yoshida et al.
Patent Abstracts of Japan, Publication No. 2001-185717, dated Jul. 6, 2001.
Patent Abstracts of Japan, Publication No. 2002-359256, dated Dec. 13, 2002.
T. Hashizume, et al.; “Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces”;Applied Physics Letters; vol. 80; No. 24; Jun. 17, 2002; pp. 4564-4566.

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