Memory cell with reduced size and standby current

Details Memory cell with reduced size and standby current Memory cell with reduced size and standby current

2007-08-07

2007-08-07

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S594000, C438S947000

Reexamination Certificate

active

11399137

ABSTRACT:
A present invention is a method, and resulting device, for fabricating memory cells with an extremely small area and reduced standby current. The small area is accomplished by a judicious use of spacers which allows a tunnel window of a storage device to be fabricated in close proximity to an associated select gate and with a reduced gate width compared to typical devices. The tunnel window is recessed within an upper surface of a substrate. The tunnel window recess is made possible by selective etching of the substrate and oxides covering the substrate. A substantial reduction in the size of a tunnel window means device scaling is possible far beyond what is attainable with standard photolithography. Standby current is reduced significantly by fabricating a select device with complementary material types for the gate compared with the adjacent source/drain regions.

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