Memory cell that includes a vertical transistor and a trench cap

Details Memory cell that includes a vertical transistor and a trench cap Memory cell that includes a vertical transistor and a trench cap

1999-03-18

2000-11-21

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438164, 438249, 438259, 438268, H01L 218242

Patent

active

061502103

ABSTRACT:
A memory cell for a dynamic random access memory includes a pass transistor and a storage capacitor. The transistor is a vertical transistor formed along an upper portion of a sidewall of a polysilicon-filled trench in a monocrystalline silicon body with the source and drain in the body and the source contact, gate and gate contact in the trench, with its gate dielectric being an oxide layer on the sidewall portion of the trench. The capacitor is a vertical capacitor formed along a deeper portion of the trench and has as its storage plate a lower polysilicon layer in the trench and as its reference plate a deep doped well in the body. The source contact and the storage plate are in electrical contact in the trench and the source contact and the gate contact are in the trench electrically isolated from one another.

REFERENCES:
patent: 5618745 (1997-04-01), Kita
patent: 5844266 (1998-12-01), Stengl et al.

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