Memory cell that includes a vertical transistor and a trench cap

Details Memory cell that includes a vertical transistor and a trench cap Memory cell that includes a vertical transistor and a trench cap

1996-12-20

1999-08-10

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438268, 438259, 438243, H01L 21336

Patent

active

059372966

ABSTRACT:
A memory cell for a dynamic random access memory includes a pass transistor and a storage capacitor. The transistor is a vertical transistor formed along an upper portion of a sidewall of a polysilicon-filled trench in a monocrystalline silicon body with the source and drain in the body and the source contact, gate and gate contact in the trench, with its gate dielectric being an oxide layer on the sidewall portion of the trench. The capacitor is a vertical capacitor formed along a deeper portion of the trench and has as its storage plate a lower polysilicon layer in the trench and as its reference plate a deep doped well in the body. The source contact and the storage plate are in electrical contact in the trench and the source contact and the gate contact are in the trench electrically isolated from one another.

REFERENCES:
patent: 5360758 (1994-11-01), Bronner et al.
patent: 5365097 (1994-11-01), Kenney
patent: 5376575 (1994-12-01), Kim et al.
patent: 5395786 (1995-03-01), Hsu et al.
patent: 5482883 (1996-01-01), Rajeevakumar
Wolf et al., Silicon Processing for the VLSI Era, vol. 1:Process Technology, p. 124, 1986.

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