Memory cell that can store data nonvolatily using a ferroelectri

Details Memory cell that can store data nonvolatily using a ferroelectri Memory cell that can store data nonvolatily using a ferroelectri

1997-01-17

1998-05-12

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365200, G11C 1122

Patent

active

057516278

ABSTRACT:
In a bistable memory element including a first inverting circuit of an N channel MOSFET and a P channel MOSFET, and a second inverting circuit of an N channel MOSFET and a P channel MOSFET, a memory cell is formed of a first ferroelectric capacitor having one end coupled to the input of the first inverting circuit and the other end coupled to a fixed potential V.sub.CP and a second ferroelectric capacitor having one end coupled to the input of the second inverting circuit and the other end coupled to the fixed potential V.sub.CP. Since the fixed potential V.sub.CP can be varied to an arbitrary value by an external signal, the intensity of the electric field applied to the ferroelectric capacitor can be set to an arbitrary value.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4974204 (1990-11-01), Miller
patent: 5293348 (1994-03-01), Abe
patent: 5434811 (1995-07-01), Evans, Jr. et al.

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