Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-18
2007-09-18
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S903000, C257SE27098, C257SE21661
Reexamination Certificate
active
11340397
ABSTRACT:
A memory structure that reduces soft-errors for us in CMOS devices is provided. The memory cell layout utilizes transistors oriented such that the source-to-drain axis is parallel a shorted side of the memory cell. The dimensions of the memory cell are such that it has a longer side and a shorter side, wherein the longer side is preferably about twice as long as the shorter side. Such an arrangement uses a shorter well path to reduce the resistance between transistors and the well strap. The shorter well strap reduces the voltage during operation and soft errors.
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Ngo Ngan V.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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