Memory cell strings in a resistive cross point memory cell...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S063000, C365S189070

Reexamination Certificate

active

06842364

ABSTRACT:
A method for performing a read operation from a memory cell in a memory cell is provided. The method includes applying a constant current across the memory cell string, measuring a first voltage across the memory cell string, writing the memory cell to a first state, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.

REFERENCES:
patent: 5894447 (1999-04-01), Takashima
patent: 6169686 (2001-01-01), Brug et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6388917 (2002-05-01), Hoffmann et al.
patent: 6512690 (2003-01-01), Qi et al.
patent: 6567297 (2003-05-01), Baker
patent: 6724651 (2004-04-01), Hirai
patent: 20020101758 (2002-08-01), Baker
patent: 20030039162 (2003-02-01), Baker
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements” by M. Durlam et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, Motorola Labs, Physical Sciences Research Labs, Tempe, AZ, Section TA 7.3.
“A 10ns Read and Write Non-volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” by Roy Scheuerlein et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, IBM Research Almaden Research Center, San Jose, CA, Section TA 7.2.
“Offset Compensating Bit-Line Sensing Scheme for High Density DRAM's” by Yohi Watanabe et al., IEE Jurnal of Solid-State Circuits, vol. 29, No. 1, Jan. 1994.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory cell strings in a resistive cross point memory cell... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell strings in a resistive cross point memory cell..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell strings in a resistive cross point memory cell... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3392881

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.