Memory cell strings

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S063000, C365S189070

Reexamination Certificate

active

06914809

ABSTRACT:
A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.

REFERENCES:
patent: 6169686 (2001-01-01), Brug et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6567297 (2003-05-01), Baker
patent: 6850431 (2005-02-01), Swanson et al.
patent: 2002/0101758 (2002-08-01), Baker
patent: 2003/0039162 (2003-02-01), Baker
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements” by M. Durlam et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, Motorola Labs, Physical Sciences Research Labs, Tempe, AZ, Section TA 7.3.
“A 10ns Read and Write Non-volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” by Roy Scheuerlein et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, IBM Research Almaden Research Center, San Jose, CA, Section TA 7.2.
“Offset Compensating Bit-Line Sensing Scheme for High Density DRAM's” by Yohi Watanabe et al., IEE Jurnal of Solid-State Circuits, vol. 29, No. 1, Jan. 1994.

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