Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-07-05
2005-07-05
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S063000, C365S189070
Reexamination Certificate
active
06914809
ABSTRACT:
A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.
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Champion Corbin L.
Hilton Richard L.
Perner Frederick A.
Smith Kenneth K.
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