Memory cell providing simultaneous non-destructive access to vol

Details Memory cell providing simultaneous non-destructive access to vol Memory cell providing simultaneous non-destructive access to vol

1985-04-30

1987-06-09

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365185, 365 49, 365149, 357 235, G11C 700

Patent

active

046725806

ABSTRACT:
A memory cell providing separate storage of volatile and non-volatile data. The volatile and non-volatile data elements, which are not necessarily duplicative, can be non-destructively accessed within a single memory clock cycle via separate volatile and non-volatile bit lines. The cell stores volatile data by the storage of charge on a dynamic storage capacitor formed of a semiconductor device and stores non-volatile data by the storage of charge in the floating gate of a transistor. An array of the memory cells illustrates comparison of the volatile and non-volatile data elements within a single memory cycle particularly suited for pattern recognition.

REFERENCES:
patent: 4103348 (1978-07-01), Fagan
patent: 4354255 (1982-10-01), Stewart
patent: 4432072 (1984-02-01), Chao et al.
patent: 4435787 (1984-03-01), Yasuoka
patent: 4611309 (1986-09-01), Chuang et al.

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