Memory cell having increased capacitance via a local interconnec

Details Memory cell having increased capacitance via a local interconnec Memory cell having increased capacitance via a local interconnec

1997-03-24

1998-12-01

Nelms, David

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, G11C 1100

Patent

active

058448365

ABSTRACT:
A static random access memory (SRAM) cell having increased cell capacitance at the storage nodes utilizes a capacitive structure. The capacitive structure includes a dielectric material between polysilicon conductive lines and tungsten local interconnects. The polysilicon plates are each connected to drains of lateral transistors associated with the SRAM cell. A dielectric material such as silicon dioxide may be deposited between the local interconnect and polysilicon conductive lines. The capacitor structures are provided between first and second N-channel pull down transistors associated with the SRAM cell.

REFERENCES:
patent: 5040036 (1991-08-01), Hazani
patent: 5459686 (1995-10-01), Saito
patent: 5483083 (1996-01-01), Meguro et al.
patent: 5487044 (1996-01-01), Kawaguchi et al.
patent: 5489790 (1996-02-01), Lage
patent: 5699289 (1997-12-01), Takenaka
patent: 5708621 (1998-01-01), Tanoi

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