Memory cell having implanted region formed between select and se

Details Memory cell having implanted region formed between select and se Memory cell having implanted region formed between select and se

1999-12-10

2000-10-03

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438266, 438267, 36518508, H01L 21336

Patent

active

061272256

ABSTRACT:
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor operates as a charge injector. The charge injector provides electrons for substrate hot electron injection of electrons onto the floating gate for programming. The cell depletion/inversion region may be extended by forming a capacitor as an extension of the control gate over the substrate between the source and channel of said sense transistor.

REFERENCES:
patent: 5340760 (1994-08-01), Komori et al.
patent: 5846863 (1998-12-01), Lee et al.
patent: 5895241 (1999-04-01), Lu et al.
patent: 6008093 (1999-12-01), Aoki et al.
patent: 6026017 (2000-02-01), Wong et al.

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