Memory cell having implanted region formed between select and se

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438257, 438266, 438267, 36518508, H01L 21336

Patent

active

061272256

ABSTRACT:
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor operates as a charge injector. The charge injector provides electrons for substrate hot electron injection of electrons onto the floating gate for programming. The cell depletion/inversion region may be extended by forming a capacitor as an extension of the control gate over the substrate between the source and channel of said sense transistor.

REFERENCES:
patent: 5340760 (1994-08-01), Komori et al.
patent: 5846863 (1998-12-01), Lee et al.
patent: 5895241 (1999-04-01), Lu et al.
patent: 6008093 (1999-12-01), Aoki et al.
patent: 6026017 (2000-02-01), Wong et al.

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