Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-25
2007-12-25
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S306000, C257SE21648, C438S253000
Reexamination Certificate
active
10891806
ABSTRACT:
According to embodiments of the invention, a bit line interlayer insulating layer is placed over a semiconductor substrate. A plurality of parallel bit line patterns are placed on the bit line interlayer insulating layer. Each of the bit line patterns has a bit line and a bit line capping layer pattern stacked thereon. Bit line spacers covers side walls of the bit line patterns, buried holes penetrate predetermined regions of the bit line interlayer insulating layer between the bit line patterns. And a plurality of storage node contact plugs are placed between the bit line patterns surrounding by the bit line spacers. At this time, the storage node contact plugs fill the buried holes.
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English language abstract of Korean Publication No. 2000-0015399.
English language abstract of Korean Publication No. 2005-0002924.
Huynh Andy
Marger & Johnson & McCollom, P.C.
Nguyen Dao H.
Samsung Electronics Co,. Ltd.
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