Memory cell based on ferro-electric non volatile variable resist

Details Memory cell based on ferro-electric non volatile variable resist Memory cell based on ferro-electric non volatile variable resist

1991-05-13

1992-06-02

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365100, G11C 1122

Patent

active

051193299

ABSTRACT:
An improved memory device based on a non-volatile variable resistance element is disclosed. The resistive element is based on a semiconductor having a resistivity which is determined by the state of polarization of a ferro-electric layer. The semiconductor forms one plate of a parallel plate capacitor having a dielectric comprising the ferro-electric layer. The state of the memory device is determined by measuring the resistivity of the semiconductor layer between two contacts on the semiconductor layer. The state of polarization of the ferro-electric layer is altered by applying a voltage between one of these contacts and the other plate of the capacitor.

REFERENCES:
patent: 3281800 (1966-10-01), Fatuzzo et al.
patent: 3623031 (1971-11-01), Kumada
"New Image Storage Mechanisms in PLZT Ceramics Using Near-Ultraviolet Light", Land, et al. IEEE-SID Biennial Display Conf., New York, Oct.12-14, 1976.

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