Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-06
2008-05-06
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S263000, C438S264000
Reexamination Certificate
active
07368350
ABSTRACT:
A method for fabricating stacked non-volatile memory cells and non-volatile memory cell arrays are disclosed. A semiconductor wafer is provided having a charge-trapping layer and a conductive layer deposited on the surface of the semiconductor wafer. Using a mask layer on top of the conductive layer, contact holes are formed into which a contact fill material is deposited. A further conductive layer is deposited on the surface of the semiconductor wafer and is patterned so as to form word lines. The contact fill material is connected to a contact plug using the contact holes with the contact fill material as a landing pad.
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Kuesters Karl-Heinz
Mikolajick Thomas
Mueller Torsten
Olligs Dominik
Polei Veronika
Infineon - Technologies AG
Slater & Matsil L.L.P.
Trinh Michael
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