Memory cell arrangement of memory cells arranged in the form of

Static information storage and retrieval – Read/write circuit – Precharge

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365210, G11C 700

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active

058257012

ABSTRACT:
The memory cell arrangement has MOS transistors (10) connected between bitlines (4, 4.sub.1) and connected row-by-row by means of selection lines (5). For pre-charging of all the bitlines (4, 4.sub.1) without a blocking of an access to these lines, further MOS transistors (20), connected between the bitlines (4, 4.sub.1) and a supply line (7), are provided, whose gate terminals (20.sub.2) are connected to a common pre-charging line (6).

REFERENCES:
patent: 3848236 (1974-11-01), Troutman
patent: 5414663 (1995-05-01), Komarek et al.

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