Memory cell and method of making the memory cell

Details Memory cell and method of making the memory cell Memory cell and method of making the memory cell

2007-12-11

2007-12-11

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S687000, C438S387000, C257S040000, C257S301000, C257S043000, C257SE21660

Reexamination Certificate

active

11063138

ABSTRACT:
Methods of making memory devices/cells are disclosed. A memory cell contains first and second electrode layers and a controllably conductive media therebetween. The controllably conductive media contains a copper sulfide-containing passive layer and active layer containing a Cu-doped tantalum oxide and/or titanium oxide layer. Methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.

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